random access memory/timing

from HTYP, the free directory anyone can edit if they can prove to me that they're not a spambot
< random access memory
Revision as of 17:52, 28 June 2021 by Woozle (talk | contribs) (→‎Terms: removed unneeded text)
Jump to navigation Jump to search

In general, lower numbers are better (the only exception is the speed). RAM should work in a device as long as the device's required numbers are not lower than those for the RAM.

I think the format is:

  • <tech>-<internal clock speed> <CAS>-<tRCD>-<tRP>-<tRAS>[-<CMD>]
    • example: PC3-10600S-09-10-F2
      • tech = PC3
      • speed = 10600 (S = ?)
      • CAS = 09
      • tRCD = 10
      • tRP = F2(?)

...but I haven't been able to confirm all of this.

Terms

  • CAS = Column Address Strobe latency, aka CL
    • CASn or CLn means the memory controller must wait n clock cycles until data is delivered after a request is made
    • This is the time it takes between (a) the processor asking for some data from the memory and (b) receiving it.
  • tRCD = RAS-to-CAS Delay = the time it takes between the activation of the line (RAS) and the column (CAS) where the data are stored in the matrix
  • tRP = RAS Precharge = the time it takes between disabling the access to a line of data and the beginning of the access to another line of data
  • tRAS = Active to Precharge Delay = how long the memory has to wait until the next access to the memory can be initiated
  • CMD = Command Rate = the number of clock cycles it takes between the memory chip having been activated and when the first command may be sent to the memory
    • Sometimes this value is not shown.
    • It usually is T1 (1 clock cycle) or T2 (2 clock cycles).

Source

Reference